JPH0412627B2 - - Google Patents

Info

Publication number
JPH0412627B2
JPH0412627B2 JP58229927A JP22992783A JPH0412627B2 JP H0412627 B2 JPH0412627 B2 JP H0412627B2 JP 58229927 A JP58229927 A JP 58229927A JP 22992783 A JP22992783 A JP 22992783A JP H0412627 B2 JPH0412627 B2 JP H0412627B2
Authority
JP
Japan
Prior art keywords
power supply
source
gate electrode
type
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58229927A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60123053A (ja
Inventor
Isao Akima
Hiroshi Tachimori
Osamu Takahashi
Hiroshi Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP58229927A priority Critical patent/JPS60123053A/ja
Publication of JPS60123053A publication Critical patent/JPS60123053A/ja
Publication of JPH0412627B2 publication Critical patent/JPH0412627B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58229927A 1983-12-07 1983-12-07 半導体装置 Granted JPS60123053A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58229927A JPS60123053A (ja) 1983-12-07 1983-12-07 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58229927A JPS60123053A (ja) 1983-12-07 1983-12-07 半導体装置

Publications (2)

Publication Number Publication Date
JPS60123053A JPS60123053A (ja) 1985-07-01
JPH0412627B2 true JPH0412627B2 (en]) 1992-03-05

Family

ID=16899914

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58229927A Granted JPS60123053A (ja) 1983-12-07 1983-12-07 半導体装置

Country Status (1)

Country Link
JP (1) JPS60123053A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2792628B2 (ja) * 1987-04-03 1998-09-03 テキサス インスツルメンツ インコーポレイテツド 半導体装置
EP0357410B1 (en) * 1988-09-01 1993-11-03 Fujitsu Limited Semiconductor integrated circuit device
US5055903A (en) * 1989-06-22 1991-10-08 Siemens Aktiengesellschaft Circuit for reducing the latch-up sensitivity of a cmos circuit
JP2833291B2 (ja) * 1991-10-09 1998-12-09 日本電気株式会社 Ｃｍｏｓ型半導体集積回路装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS5357775A (en) * 1976-11-04 1978-05-25 Mitsubishi Electric Corp Semiconductor ingegrated circuit device
JPS5422780A (en) * 1977-07-22 1979-02-20 Hitachi Ltd Complementary misic

Also Published As

Publication number Publication date
JPS60123053A (ja) 1985-07-01

Similar Documents

Publication Publication Date Title
US4691217A (en) Semiconductor integrated circuit device
US7345345B2 (en) Semiconductor device
US4261004A (en) Semiconductor device
EP0360477A2 (en) Integrated circuit power supply contact
US7777294B2 (en) Semiconductor device including a high-breakdown voltage MOS transistor
JPH0144021B2 (en])
JP2954854B2 (ja) 集積回路チップ
US4024418A (en) Integrated circuit CMOS inverter structure
KR100449874B1 (ko) 반도체집적회로장치
JPH0653497A (ja) 入出力保護回路を備えた半導体装置
JP2602974B2 (ja) Ｃｍｏｓ半導体集積回路装置
JPH0412627B2 (en])
JPH04241452A (ja) 半導体集積回路装置
JP3149999B2 (ja) 半導体入出力保護装置
JP2737629B2 (ja) Ｃｍｏｓ構成の出力回路を有する半導体装置
JP3141865B2 (ja) 半導体集積装置
JPS6362904B2 (en])
US20050218457A1 (en) MOSFET for an open-drain circuit and semiconductor integrated circuit device employing it
JPS6360547B2 (en])
JP3271435B2 (ja) 半導体集積回路装置
KR940009358B1 (ko) 반도체장치
JPH039559A (ja) 半導体集積装置
JPH01185971A (ja) 絶縁ゲート型半導体装置
JPH08222640A (ja) 半導体集積回路装置
JPH0636596Y2 (ja) Ｃｍｏｓ半導体装置